PART |
Description |
Maker |
NTE2164 NTE-DRAM NTE4164 NTE2102 NTE2128 NTE2117 N |
NMOS / 64k DRAM MICROPROCESSOR & MEMORY CIRCUITS
|
NTE Electronics
|
M27256 M27256-1F1 M27256-1F6 M27256-20F1 M27256-20 |
NMOS 64K 8K x 8 UV EPROM NMOS 256K 32K x 8 UV EPROM
|
ST Microelectronics STMicroelectronics
|
AK49064SP-10 AK44064SP-10 AK44256SN-12 AK411024SRM |
64K X 9 MULTI DEVICE DRAM MODULE, 100 ns, SMA30 64K X 4 MULTI DEVICE DRAM MODULE, 100 ns, SMA22 256K X 4 MULTI DEVICE DRAM MODULE, 120 ns, SMA22 1M X 1 MULTI DEVICE DRAM MODULE, 150 ns, SMA22 128K X 1 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18 64K X 2 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18
|
|
M10B11664A-45T M10B11664A M10B11664A-25J M10B11664 |
64K X 16 DRAM FAST PAGE MODE 64K的16的DRAM快速页面模 N/A
|
Electronic Theatre Controls, Inc. N/A Elite Memory Technology, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
ETL9320 ETL9321 ETL9322 ETL9420 ETL9421 ETL9422 ET |
NMOS microcontroller 1K x 8 ROM, 64 x 4 RAM NMOS MICROCONTROLLERS
|
ST Microelectronics SGS Thomson Microelectronics STMicroelectronics
|
DP3D64MX8RY5-60C |
64K X 8 FAST PAGE DRAM MODULE, 60 ns, QMA48 LEADLESS, TSOP-48
|
Intersil, Corp.
|
V53C466Z V53C466J |
High Performance / Low Power 64K x 4-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32 |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
CY27H512-30JC CY27H512-30WC CY27H512-35HC CY27H512 |
64K x 8 High-Speed CMOS EPROM 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 25 ns, PDSO28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, PDSO28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 30 ns, PDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 55 ns, CDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, CDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CQCC32 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 70 ns, CQCC32 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDSO28 CAP SM CER 2200PFD 50V 10% X7R 0805
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44 2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位) P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|